What is graphite target and Why Do We Use Them?
Graphite (C) Sputtering Target Factory China
Graphite (C) sputtering targets are widely used in physical vapor deposition (PVD) processes for depositing thin films of carbon onto a substrate. Graphite is a form of carbon that is highly conductive, chemically stable, and has a high melting point, making it ideal for a range of applications, such as in the manufacture of electronic devices, solar cells, and biomedical implants.
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The sputtering process involves bombarding the target material with high-energy plasma ions, which dislodge atoms from the target surface and deposit them onto a substrate to form a thin film. Graphite sputtering targets are made of high-purity graphite materials and are available in various shapes and sizes, such as round disks, rectangular tiles, and custom shapes.
Graphite sputtering targets are highly durable and provide consistent, high-quality thin films in PVD processes. They have excellent thermal and electrical conductivity, good adhesion to substrates, and high hardness, which make them suitable for use in high-temperature and high-pressure environments.
Graphite sputtering targets are commonly used in the production of electronic devices, such as integrated circuits, solar cells, and flat panel displays. They are also used in the manufacture of biomedical implants and other medical devices due to their biocompatibility and chemical stability.
In addition, graphite sputtering targets are used in the production of coatings for cutting tools, which need to withstand high temperatures and pressures. They are also used in the aerospace industry for thermal protection and as a lubricating material in high-temperature environments.
Overall, graphite sputtering targets are highly valued in the semiconductor industry and other high-tech fields due to their unique properties and a wide range of applications.
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Carbon (Graphite) C Sputtering Targets - Kurt J. Lesker Company
Carbon (Graphite) (C) Sputtering Targets Overview
Our comprehensive offering of sputtering targets, evaporation sources and other deposition materials is listed by material throughout the website. Below you will find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. To speak to someone directly about current pricing or for a quote on sputtering targets and other deposition products not listed, please click here.
Carbon (Graphite) (C) General Information
Standard carbon graphite targets can be very difficult to sputter. Carbon has one of the lowest sputter yields of all elements which is attributed to its Sp2 microstructure as well as its anisotropic electrical characteristics. Due to open spaces in Carbon's structural lattice, sputter rates are low and the process is very time-consuming. Standard carbon graphite targets are typically produced by hot-pressing. These targets are generally highly porous and contain randomly oriented grains which results in different localized effects, contributing to the low sputter yield.
On the other hand, Pyrolytic Graphite sputtering targets are much more directional and may have the ability to sputter at higher rates. Pyrolytic Graphite targets are made by chemical vapor deposition (CVD) and are grown atom-by-atom. The resulting material has better thermal, electrical and chemical properties. Due to the nature of the deposition process by CVD, Pyrolytic Graphite material approaches the theoretical density and is essentially non-porous so outgassing occurs quickly.
Carbon (Graphite) (C) Specifications
* This is a recommendation based on our experience running these materials in KJLC guns. The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material.
* Suggested maximum power densities are based on using a sputter up orientation with optimal thermal transfer from target to the sputter cathode cooling well. Using other sputtering orientations or if there is a poor thermal interface between target to sputter cathode cooling well may require a reduction in suggested maximum power density and/or application of a thermal transfer paste. Please contact for specific power recommendations.
Notes:- Bonding is recommended for these materials. Many materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. Request more information, please click here.
- This material may require special ramp up and ramp down procedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock. Please click here for Ramp Procedure for Ceramic Target Break-in.